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| pn junction theory: Semiconductor Physical Electronics Sheng S. Li, 2007-01-16 Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondictor industry. |
| pn junction theory: Physics of P-n Junctions and Semiconductor Devices Solomon Meerovich Ryvkin, Ju. V. Smartsev, Iri Vasil℗þevich Shmarsev, 1971 |
| pn junction theory: Principles of Solar Cells, LEDs and Diodes Adrian Kitai, 2011-09-13 The book will cover the two most important applications of semiconductor diodes - solar cells and LEDs - together with quantitative coverage of the physics of the PN junction at the senior undergraduate level. It will include: Review of semiconductor physics Introduction to PN diodesThe solar cell Physics of efficient conversion of sunlight into electrical energy Semiconductor solar cell materials and device physics Advanced solar cell materials and devices The light emitting diode Physics of efficient conversion of electrical energy into light Semiconductor light emitting diode materials and device physics Advanced light emitting diode materials and devices-- |
| pn junction theory: MOSFET Models for VLSI Circuit Simulation Narain D. Arora, 2012-12-06 Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction. |
| pn junction theory: Semiconductor Devices James Fiore, 2017-05-11 Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER. |
| pn junction theory: The PN Junction Diode Gerold W. Neudeck, 1983 This text builds a foundation in PN junction theory from a conceptual and mathematical viewpoint. The second edition adds a large number of end-of-chapter problems, solved exercises, and a new chapter on metal-semiconductor contacts. |
| pn junction theory: University Physics Samuel J. Ling, Jeff Sanny, William Moebs, 2016-09-29 University Physics is a three-volume collection that meets the scope and sequence requirements for two- and three-semester calculus-based physics courses. Volume 1 covers mechanics, sound, oscillations, and waves. This textbook emphasizes connections between theory and application, making physics concepts interesting and accessible to students while maintaining the mathematical rigor inherent in the subject. Frequent, strong examples focus on how to approach a problem, how to work with the equations, and how to check and generalize the result.--Open Textbook Library. |
| pn junction theory: The Tao of Microelectronics Yumin Zhang, 2014-12-01 Microelectronics is a challenging course to many undergraduate students and is often described as very messy. Before taking this course, all the students have learned circuit analysis, where basically all the problems can be solved by applying Kirchhoff's |
| pn junction theory: Physical Principles Involved in Transistor Action J and Brattain W H Bardeen, 2021-09-09 This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. To ensure a quality reading experience, this work has been proofread and republished using a format that seamlessly blends the original graphical elements with text in an easy-to-read typeface. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant. |
| pn junction theory: Crystal Fire Michael Riordan, Lillian Hoddeson, 1997 It's hard to imagine any device more crucial to modern life than the microchip and the transistor from which it sprang. Every waking hour of every day people benefit from its use in cellular phones, computers, radios, TVs, and ATMs. This eloquent retelling of the story behind the invention of the transistor recounts how pride and jealousy coupled with scientific aspirations ignited the greatest technological explosion in history. Photos & drawings. |
| pn junction theory: Semiconductor Physics and Devices Donald A. Neamen, 2003 Neamen's Semiconductor Physics and Devices, Third Edition. deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way. |
| pn junction theory: 2D Materials Phaedon Avouris, Tony F. Heinz, Tony Low, 2017-06-29 Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry. |
| pn junction theory: Semiconductor Fundamentals Robert F. Pierret, 1988-01-01 This book presents those terms, concepts, equations, and models that are routinely used in describing the operational behavior of solid state devices. The second edition provides many new problems and illustrative examples. |
| pn junction theory: Modern Semiconductor Devices for Integrated Circuits Chenming Hu, 2010 For courses in semiconductor devices. Prepare your students for the semiconductor device technologies of today and tomorrow. Modern Semiconductor Devices for Integrated Circuits, First Edition introduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications. Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for both undergraduate and graduate students, and serves as a suitable reference text for practicing engineers. |
| pn junction theory: Photoconductivity N V Joshi, 1990-05-25 This book highlights important facets of photoconductivity and photodetection. It focuses on modem photodetectors, describes various configurations for experimental techniques in photoconductivity measurements, and observes unusual photoconducting properties in diluted magnetic semiconductors. |
| pn junction theory: Physics of Semiconductor Devices J.-P. Colinge, C.A. Colinge, 2007-05-08 Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. |
| pn junction theory: Basic Theory and Application of Tunnel Diodes Sylvester P. Gentile, 1962 |
| pn junction theory: Introduction To Semiconductor Device Modelling Christopher M Snowden, 1998-09-29 This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. |
| pn junction theory: Semiconductor Physics and Applications M. Balkanski, Richard Fisher Wallis, 2000-08-31 This textbook covers the basic physics of semiconductors and their applications to practical devices, with emphasis on the basic physical principles upon which these devices operate. Extensive use of figures is made to enhance the clarity of the presentation and to establish contact with the experimental side of the topic. Graduate students and lecturers in semiconductor physics, condensed matter physics, electromagnetic theory, and quantum mechanics will find this a useful textbook and reference work. |
| pn junction theory: Introductory Semiconductor Device Physics Greg Parker, 2004-09-30 Introduction to Semiconductor Device Physics is a popular and established text that offers a thorough introduction to the underlying physics of semiconductor devices. It begins with a review of basic solid state physics, then goes on to describe the properties of semiconductors including energy bands, the concept of effective mass, carrier concentr |
| pn junction theory: 2020 21st International Conference on Electronic Packaging Technology (ICEPT). , 2020 |
| pn junction theory: Photon Counting Nikolay Britun, Anton Nikiforov, 2018-03-21 Photon counting is a unified name for the techniques using single-photon detection for accumulative measurements of the light flux, normally occurring under extremely low-light conditions. Nowadays, this approach can be applied to the wide variety of the radiation wavelengths, starting from X-ray and deep ultraviolet transitions and ending with far-infrared part of the spectrum. As a special tribute to the photon counting, the studies of cosmic microwave background radiation in astronomy, the experiments with muon detection, and the large-scale fundamental experiments on the nature of matter should be noted. The book provides readers with an overview on the fundamentals and state-of-the-art applications of photon counting technique in the applied science and everyday life. |
| pn junction theory: Semiconductor Devices S. M. Sze, 1991 A collection of 141 important papers on semiconductor devices covering a period of 100 years, from the earliest systematic investigation of metal-semiconductor contacts in 1874 to the first observation of the resonant tunneling in 1974. The papers are divided into four parts: bipolar, unipolar, microwave, and photonic devices, with a commentary for each part to highlight the importance of each of the papers. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR |
| pn junction theory: Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 Dieter K. Schroder, 2007 Diagnostic characterization techniques for semiconductor materials, devices and device processing are addressed at this symposium. It will cover new techniques as well as advances in routine analytical technology applied to semiconductor process development and manufacture. The hardcover edition includes a CD-ROM of ECS Transactions, Volume 10, Issue 1, Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007). The PDF edition also includes the ALTECH 2007 papers. |
| pn junction theory: Polarization Effects in Semiconductors Debdeep Jena, 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the Polarization Effects in Semiconductors DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development. |
| pn junction theory: Introduction to Basic Electronics and Circuits Dr.Prasad Rao Rayavarapu, Mr.Varahala Dora Petla, Dr.M.Semal Sekhar, Mr.S.Phani Varaprasad, 2025-04-07 Dr.Prasad Rao Rayavarapu, Professor, Department of Electronics & Communication Engineering, Avanthi Institute of Engineering and Technology, Anakapalle, Andhra Pradesh, India. Mr.Varahala Dora Petla, Assistant Professor, Department of Electrical & Electronics Engineering, Avanthi Institute of Engineering and Technology, Anakapalle, Andhra Pradesh, India. Dr.M.Semal Sekhar, Professor, Department of Electronics & Communication Engineering, Avanthi Institute of Engineering and Technology, Anakapalle, Andhra Pradesh, India. Mr.S.Phani Varaprasad, Assistant Professor, Department of Electronics & Communication Engineering, Avanthi Institute of Engineering and Technology, Anakapalle, Andhra Pradesh, India. |
| pn junction theory: Semiconductor Device Fundamentals Robert F. Pierret, 1996 Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost frantic pace. While the number of devices in complex integrated circuits increases and the size of chips decreases, semiconductor properties are now being engineered to fit design specifications. Semiconductor Device Fundamentals serves as an excellent introduction to this fascinating field. Based in part on the Modular Series on Solid State Devices, this textbook explains the basic terminology, models, properties, and concepts associated with semiconductors and semiconductor devices. The book provides detailed insight into the internal workings of building block device structures and systematically develops the analytical tools needed to solve practical device problems. |
| pn junction theory: Semiconductor Laser Theory Prasanta Kumar Basu, Bratati Mukhopadhyay, Rikmantra Basu, 2015-07-16 Developed from the authors’ classroom-tested material, Semiconductor Laser Theory takes a semiclassical approach to teaching the principles, structure, and applications of semiconductor lasers. Designed for graduate students in physics, electrical engineering, and materials science, the text covers many recent developments, including diode lasers using quantum wells, quantum dots, quantum cascade lasers, nitride lasers, group IV lasers, and transistor lasers. The first half of the book presents basic concepts, such as the semiconductor physics needed to understand the operation of lasers, p-n junction theory, alloys, heterostructures, quantum nanostructures, k.p theory, waveguides, resonators, filters, and optical processes. The remainder of the book describes various lasers, including double heterostructure, quantum wire, quantum dot, quantum cascade, vertical-cavity surface-emitting, single-mode and tunable, nitride, group IV, and transistor lasers. This textbook equips students to understand the latest progress in the research and development of semiconductor lasers, from research into the benefits of quantum wire and quantum dot lasers to the application of semiconductor lasers in fiber-optic communications. Each chapter incorporates reading lists and references for further study, numerous examples to illustrate the theory, and problems for hands-on exploration. |
| pn junction theory: Semiconductor Optoelectronic Devices Pallab Bhattacharya, 1997 The first true introduction to semiconductor optoelectronic devices, this book provides an accessible, well-organized overview of optoelectric devices that emphasizes basic principles.Coverage begins with an optional review of key concepts—such as properties of compound semiconductor, quantum mechanics, semiconductor statistics, carrier transport properties, optical processes, and junction theory—then progress gradually through more advanced topics. The Second Edition has been both updated and expanded to include the recent developments in the field. |
| pn junction theory: Semiconductor Heterostructures Zh. I. Alferov, 1989 |
| pn junction theory: Semiconductor Statistics J. S. Blakemore, 2002-01-01 In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination. 1962 edition. |
| pn junction theory: Device Electronics for Integrated Circuits Richard S. Muller, Theodore I. Kamins, K. C. Hsieh, J. H. Kim, B. Y. Liu, 1986 |
| pn junction theory: Fundamentals of Solid State Engineering M. Razeghi, 2002 Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.--Publisher's website. |
| pn junction theory: Nanostructured Materials for Solar Energy Conversion Tetsuo Soga, 2006-12-14 Nanostructured Materials for Solar Energy Conversion covers a wide variety of materials and device types from inorganic materials to organic materials. This book deals with basic semiconductor physics, modelling of nanostructured solar cell, nanostructure of conventional solar cells such as silicon, CIS and CdTe, dye-sensitized solar cell, organic solar cell, photosynthetic materials, fullerene, extremely thin absorber (ETA) solar cell, quantum structured solar cell, intermediate band solar cell, carbon nanotube, etc. including basic principle and the latest results. There are many books written on conventional p-n junction solar cells, but few books focus on new concepts in this area.* Focuses on the use of nanostructured materials for solar energy* Looks at a wide variety of materials and device types* Covers both organic and inorganic materials |
| pn junction theory: Thermoelectric Behavior of P-n Junctions M. Cutler, 1960 |
| pn junction theory: Semiconductor Physics Karlheinz Seeger, 2013-06-29 The first edition of Semiconductor Physics was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo MIR, Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects. |
| pn junction theory: Fundamentals of Semiconductor Physics and Devices , 1997 This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both. |
| pn junction theory: Low-Frequency Electromagnetic Modeling for Electrical and Biological Systems Using MATLAB Sergey N. Makarov, Gregory M. Noetscher, Ara Nazarian, 2015-05-13 Provides a detailed and systematic description of the Method of Moments (Boundary Element Method) for electromagnetic modeling at low frequencies and includes hands-on, application-based MATLAB® modules with user-friendly and intuitive GUI and a highly visualized interactive output. Includes a full-body computational human phantom with over 120 triangular surface meshes extracted from the Visible Human Project® Female dataset of the National library of Medicine and fully compatible with MATLAB® and major commercial FEM/BEM electromagnetic software simulators. This book covers the basic concepts of computational low-frequency electromagnetics in an application-based format and hones the knowledge of these concepts with hands-on MATLAB® modules. The book is divided into five parts. Part 1 discusses low-frequency electromagnetics, basic theory of triangular surface mesh generation, and computational human phantoms. Part 2 covers electrostatics of conductors and dielectrics, and direct current flow. Linear magnetostatics is analyzed in Part 3. Part 4 examines theory and applications of eddy currents. Finally, Part 5 evaluates nonlinear electrostatics. Application examples included in this book cover all major subjects of low-frequency electromagnetic theory. In addition, this book includes complete or summarized analytical solutions to a large number of quasi-static electromagnetic problems. Each Chapter concludes with a summary of the corresponding MATLAB® modules. Combines fundamental electromagnetic theory and application-oriented computation algorithms in the form of stand alone MATLAB® modules Makes use of the three-dimensional Method of Moments (MoM) for static and quasistatic electromagnetic problems Contains a detailed full-body computational human phantom from the Visible Human Project® Female, embedded implant models, and a collection of homogeneous human shells Low-Frequency Electromagnetic Modeling for Electrical and Biological Systems Using MATLAB® is a resource for electrical and biomedical engineering students and practicing researchers, engineers, and medical doctors working on low-frequency modeling and bioelectromagnetic applications. |
| pn junction theory: Physics of Semiconductor Devices Simon M. Sze, Kwok K. Ng, 2006-12-13 The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department. |
| pn junction theory: Semiconductors and Semimetals , 1981-09-02 Semiconductors and Semimetals |
我理解的半导体 pn 结的原理，哪里错了？ - 知乎
当pn结形成的时候，p型半导体和n型半导体直接接触。之前曾经讲过热平衡时同一块半导体材料会具有统一的费米能级，所以当pn结形成时，半导体的能带会发生弯曲，使得p型和n型半导体的 …
一个关于pn结的扩散电流与漂移电流的问题？ - 知乎
以硅pn结为例。 p区为掺了3族元素的半导体硅。在常温下，p区的能自由移动的带正电荷的空穴浓度与掺杂的3族元素（例如铝）浓度相等，而每一个空穴对应一个带负电荷的铝离子，铝离子 …
二极管PN结反偏时，外电场和内电场同向，为什么电流反而小？
pn结形成的过程，就是p型和n型的多子相互移动形成一个，由n指向p的内建电场。 这种移动有一个限度，随着n型中的电子和p中的空穴结合，n中呈正的和p中呈负的越来越多（这里指边界， …
耗尽区，积累区 ，反型层，到底什么意思有没有具体形象点的解释 …
是指pn结中在漂移运动和扩散运动双重影响下载流子的数量非常少的一个高电阻区域。 在室温附近，对绝大部分的势垒区，其中杂质虽然都已经电离，但是这里面载流子的浓度相比起n区和p区 …
为什么PN结正接，空间电荷区变窄，而不是变宽？ - 知乎
正偏区：当pn结发生正偏，两个方面的理解。 第一种理解：P是正压，N是负压，场（该场指内建电场）外的电场方向是从P正端指向N负端，那么该方向正好与内建电场相反，所以两个电场 …
PN结中漂移远动和扩散远动什么意思？ - 知乎
Jan 6, 2021 · 针对pn结我想先说下课本中没有讲明白的几点. 1，空穴本身不存在，是自由电子挣脱束缚形成的，所以内建电场什么多子少子扩散其实还是电子从n区边界扩散到p区边界，那么n …
为什么PN结正向导通时，外电场就会削弱内电场;导通后，载流子 …
Apr 6, 2021 · 这个理解很有逻辑性，只是忽略了一个点，那就是：外部电源会源源不断的，从pn结两侧补充载流子，扩散掉多少就补偿多少。所以，导通后，耗尽层宽度不变，内建电场也不变。
为什么pn结内电场会阻碍多子的扩散运动? - 知乎
Jan 26, 2016 · pn结内电场的作用力下，为什么会阻碍n区的自由电子的扩散运动同时也会有利于p区少子自由电子的漂移运动？ 2 个回答 PN结形成后，虽有内电场，整个半导体仍呈现电中 …
如何从PN结的电流方程来理解其伏安特性曲线和温度对伏安特性的 …
多子浓度取决于PN结的的掺杂比，而少子浓度则取决于温度。 要让PN结降低死去电压，可以提高温度，离子的热运动速度较大，提高了少子的浓度，只需要较小的电开启电压 Uon 就可以 …
P型半导体和N型半导体和PN结对外显什么电性？为什么？ - 知乎
Apr 16, 2019 · 知乎，中文互联网高质量的问答社区和创作者聚集的原创内容平台，于 2011 年 1 月正式上线，以「让人们更好的分享知识、经验和见解，找到自己的解答」为品牌使命。知乎凭 …
我理解的半导体 pn 结的原理，哪里错了？ - 知乎
当pn结形成的时候，p型半导体和n型半导体直接接触。之前曾经讲过热平衡时同一块半导体材料会具有统一的费米能级，所以当pn结形成时，半导体的能带会发生弯曲，使得p型和n型半导体 …
一个关于pn结的扩散电流与漂移电流的问题？ - 知乎
以硅pn结为例。 p区为掺了3族元素的半导体硅。在常温下，p区的能自由移动的带正电荷的空穴浓度与掺杂的3族元素（例如铝）浓度相等，而每一个空穴对应一个带负电荷的铝离子，铝离子 …
二极管PN结反偏时，外电场和内电场同向，为什么电流反而小？
pn结形成的过程，就是p型和n型的多子相互移动形成一个，由n指向p的内建电场。 这种移动有一个限度，随着n型中的电子和p中的空穴结合，n中呈正的和p中呈负的越来越多（这里指边 …
耗尽区，积累区 ，反型层，到底什么意思有没有具体形象点的解释 …
是指pn结中在漂移运动和扩散运动双重影响下载流子的数量非常少的一个高电阻区域。 在室温附近，对绝大部分的势垒区，其中杂质虽然都已经电离，但是这里面载流子的浓度相比起n区和p区 …
为什么PN结正接，空间电荷区变窄，而不是变宽？ - 知乎
正偏区：当pn结发生正偏，两个方面的理解。 第一种理解：P是正压，N是负压，场（该场指内建电场）外的电场方向是从P正端指向N负端，那么该方向正好与内建电场相反，所以两个电场 …
PN结中漂移远动和扩散远动什么意思？ - 知乎
Jan 6, 2021 · 针对pn结我想先说下课本中没有讲明白的几点. 1，空穴本身不存在，是自由电子挣脱束缚形成的，所以内建电场什么多子少子扩散其实还是电子从n区边界扩散到p区边界，那么n …
为什么PN结正向导通时，外电场就会削弱内电场;导通后，载流子 …
Apr 6, 2021 · 这个理解很有逻辑性，只是忽略了一个点，那就是：外部电源会源源不断的，从pn结两侧补充载流子，扩散掉多少就补偿多少。所以，导通后，耗尽层宽度不变，内建电场也不变。
为什么pn结内电场会阻碍多子的扩散运动? - 知乎
Jan 26, 2016 · pn结内电场的作用力下，为什么会阻碍n区的自由电子的扩散运动同时也会有利于p区少子自由电子的漂移运动？ 2 个回答 PN结形成后，虽有内电场，整个半导体仍呈现电中 …
如何从PN结的电流方程来理解其伏安特性曲线和温度对伏安特性的 …
多子浓度取决于PN结的的掺杂比，而少子浓度则取决于温度。 要让PN结降低死去电压，可以提高温度，离子的热运动速度较大，提高了少子的浓度，只需要较小的电开启电压 Uon 就可以 …
P型半导体和N型半导体和PN结对外显什么电性？为什么？ - 知乎
Apr 16, 2019 · 知乎，中文互联网高质量的问答社区和创作者聚集的原创内容平台，于 2011 年 1 月正式上线，以「让人们更好的分享知识、经验和见解，找到自己的解答」为品牌使命。知乎 …
