Hp 4140b

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  hp 4140b: Advanced Short-time Thermal Processing for Si-based CMOS Devices Fred Roozeboom, 2003
  hp 4140b: Physics and Technology of High-k Gate Dielectrics I Samares Kar, 2003
  hp 4140b: Oxide Reliability D. J. Dumin, 2002 Presents in summary the state of our knowledge of oxide reliability.
  hp 4140b: Advances in Rapid Thermal Processing Fred Roozeboom, 1999
  hp 4140b: Quantum Confinement VI M. Cahay, 2001 This book is a collection of some of the papers presented at the Sixth International Symposium on Quantum Confinement: Nanostructures Materials and Quantum Devices held September 5-6, 2001 in San Francisco, CA, as part of the 200th Meeting of the Electrochemical Society.
  hp 4140b: EuroCVD 17/CVD 17 M. T. Swihart, 2009-09 This issue of ECS Transactions includes papers presented at the 2009 EuroCVD-17 and CVD 17 symposium. Topical areas covered include fundamentals of chemical vapor deposition (CVD), chemistry of precursors for CVD, synthesis of nanomaterials by CVD and related methods, industrial applications of CVD, and novel CVD reactors and processes. This issue is sold as a two-part set and also includes a CD-ROM of the entire issue.
  hp 4140b: Silicon Nitride and Silicon Dioxide Thin Insulating Films M. Jamal Deen, 1997
  hp 4140b: MOSFET Models for VLSI Circuit Simulation Narain D. Arora, 2012-12-06 Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
  hp 4140b: Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS , 2005
  hp 4140b: EUROCVD 15 Anjana Devi, 2005
  hp 4140b: Thin-Film Capacitors for Packaged Electronics Jain Pushkar, Eugene J. Rymaszewski, 2011-06-27 Thin-Film Capacitors for Packaged Electronics deals with the capacitors of a wanted kind, still needed and capable of keeping pace with the demands posed by ever greater levels of integration. It spans a wide range of topics, from materials properties to limits of what's the best one can achieve in capacitor properties to process modeling to application examples. Some of the topics covered are the following: -Novel insights into fundamental relationships between dielectric constant and the breakdown field of materials and related capacitance density and breakdown voltage of capacitor structures, -Electrical characterization techniques for a wide range of frequencies (1 kHz to 20 GHz), -Process modeling to determine stable operating points, -Prevention of metal (Cu) diffusion into the dielectric, -Measurements and modeling of the dielectric micro-roughness.
  hp 4140b: Proceedings of the Symposia on Reliability of Semiconductor Devices/interconnections and Dielectric Breakdown, and Laser Process for Microelectronic Applications Electrochemical Society. Dielectric Science and Technology Division, 1992 Papers in this volume are from the 180th ECS Meeting, held in held in Phoenix, Arizona, Fall 1991. This symposium addresses all aspects of reliability of semiconductor devices, multilevel interconnection and dielectric breakdown in VLSI and ULSI technologies. The symposium establishes reliability from design through manufacturing. The second part of the symposium addresses laser ablation/etching, laser planarization laser/UV. CVD of metal end dielectric films, laser/UV enhanced etching and deposition processesing liquid phase, and photomodification of surfaces.
  hp 4140b: VLSI Design Theory and Practice , 2013
  hp 4140b: Recent Developments in Electronic Materials and Devices K. M. Nair, Amar S. Bhalla, S.-I. Hirano, 2012-03-28 With information on the subject of dielectric materials, this volume brings important updates to electronic device engineers and researchers in the area of ferroelectric materials. Topics include materials, processes, properties, and electronic devices based on these materials and systems. Proceedings of the symposium held at the 103rd Annual Meeting of The American Ceramic Society, April 22-25, 2001, in Indiana; Ceramic Transactions, Volume 131.
  hp 4140b: Dielectric Material Integration for Microelectronics William D. Brown, Electrochemical Society. Dielectric Science and Technology Division, Electrochemical Society. Meeting, 1998
  hp 4140b: Ion Implantation Technology - 94 S. Coffa, G. Ferla, E. Rimini, F. Priolo, 1995-05-16 The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
  hp 4140b: Fundamentals of Biofilm Research Zbigniew Lewandowski, Haluk Beyenal, 2013-12-16 The six years that have passed since the publication of the first edition have brought significant advances in both biofilm research and biofilm engineering, which have matured to the extent that biofilm-based technologies are now being designed and implemented. As a result, many chapters have been updated and expanded with the addition of sections reflecting changes in the status quo in biofilm research and engineering. Emphasizing process analysis, engineering systems, biofilm applications, and mathematical modeling, Fundamentals of Biofilm Research, Second Edition provides the tools to unify and advance biofilm research as a whole. Retaining the goals of the first edition, this second edition serves as: A compendium of knowledge about biofilms and biofilm processes A set of instructions for designing and conducting biofilm experiments A set of instructions for making and using various tools useful in biofilm research A set of computational procedures useful in interpreting results of biofilm research and A set of instructions for using the model of stratified biofilms for data interpretation, analysis, and biofilm activity prediction.
  hp 4140b: Ferroelectrics Mickaël Lallart, 2011-08-23 Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the underlying mechanisms of ferroelectric materials, including general ferroelectric effect, piezoelectricity, optical properties, and multiferroic and magnetoelectric devices. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric systems, allowing a deep understanding of the physical aspect of ferroelectricity.
  hp 4140b: Microelectronics Technology and Devices - SBMicro 2008 Jacobus W. Swart, 2008-08 The SBMicro symposium is a forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. This issue of ECS Transactions contains the papers presented at the 2008 conference.
  hp 4140b: Noise in Physical Systems and 1/f Fluctuations Gijs Bosman, 2001 The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
  hp 4140b: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors H. Q. Hou, Electrochemical Society. Luminescence and Display Materials Division, Electrochemical Society. Meeting, 1998
  hp 4140b: Electrical Characterization of Silicon-on-Insulator Materials and Devices Sorin Cristoloveanu, Sheng Li, 2013-11-27 Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
  hp 4140b: Sensors and Microsystems Corrado Di Natale, 2004 This book constitutes a selection of papers presented at the 8th Italian Conference on Sensors and Microsystems. It contains contributions on sensors, microsystems, actuators and related interface electronics. Aspects of chemistry, biology and materials science are also covered. In addition, special sensor applications of industrial interest are presented and discussed.The proceedings have been selected for coverage in: ? Materials Science Citation Index?? Index to Scientific & Technical Proceedings? (ISTP? / ISI Proceedings)? Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)? CC Proceedings ? Engineering & Physical Sciences
  hp 4140b: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) A. G. Baca, 2000 The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
  hp 4140b: High Temperature Materials Subhash C. Singhal, Wayne L. Worrell, 2002
  hp 4140b: Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII Ram Ekwal Sah, 2005
  hp 4140b: Evaluation of Hydrogenated Amorphous Silicon Photodiodes and Field-effect Transistors for Use as Elements of Two-dimensional X-ray Imaging Arrays John Moore Boudry, 1996
  hp 4140b: Physics and Technology of High-k Gate Dielectrics 4 Samares Kar, 2006 This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
  hp 4140b: Compound Semiconductor Power Transistors II and R. F. Kopf, A. G. Baca, S. N. G. Chu, 2000
  hp 4140b: Chemical Vapor Deposition Polymerization Jeffrey B. Fortin, Toh-Ming Lu, 2013-03-09 Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.
  hp 4140b: Photonic Devices and Systems Hunsperger, 2017-10-19 This work describes all the major devices used in photonic systems. It provides a thorough overview of the field of photonics, detailing practical examples of photonic technology in a wide range of applications. Photonic systems and devices are discussed with a mathematical rigor that is precise enough for design purposes yet highly readable.
  hp 4140b: State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 F. Ren, 2006 This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.
  hp 4140b: Noise in Physical Systems and 1/f Fluctuations T. Musha, Shunsuke Sato, Mitsuaki Yamamoto, 1992 Presents and discusses fundamental aspects and key implications of noise and fluctuations in various fields of science, technology and sociology, with special emphasis in 1/f fluctuations in biology. There are contributions from leading international experts.
  hp 4140b: Semiconductor International , 1989
  hp 4140b: ULSI Process Integration III Electrochemical Society. Meeting, 2003
  hp 4140b: Solid State Technology , 1988
  hp 4140b: Semiconductor Wafer Bonding VII : Science, Technology, and Applications , 2003
  hp 4140b: Processes at the Semiconductor-Solution Interface 4 C. O'Dwyer, 2011-04 The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).
  hp 4140b: Dielectrics in Emerging Technologies K. Wörhoff, Peter Mascher, 2003 Papers presented at the First International Symposium on Science and Technology of Dielectrics in Emerging Fields, held from 27th April to 2nd May, 2003 in Paris, France--Pref.
  hp 4140b: Transport in Metal-Oxide-Semiconductor Structures Hamid Bentarzi, 2011-01-12 This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
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Download the latest drivers, software, firmware, and diagnostics for your HP products from the official HP Support website.

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Find support and customer service options to help with your HP products including the latest drivers and troubleshooting articles.

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Looking for an online computer store for your personal or business needs? Look no further than HP.com - the home of HP’s laptop store. At HP.com, we offer a full array of innovative, award …

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